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1 MOS gate
1) Микроэлектроника: логический элемент на МОП-транзисторах2) Макаров: (metal-oxide-semiconductor gate) затвор МОП-структуры -
2 MOS gate
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3 MOS gate
The New English-Russian Dictionary of Radio-electronics > MOS gate
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4 MOS gate
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5 MOS gate (metal-oxide-semiconductor gate)
Макаров: затвор МОП-структурыУниверсальный англо-русский словарь > MOS gate (metal-oxide-semiconductor gate)
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6 v-groove MOS gate
Макаров: (VMOS gate) логический элемент на МОП-транзисторах с V-образными канавками -
7 V-groove MOS gate (VMOS gate)
Макаров: логический элемент на МОП-транзисторах с V-образными канавкамиУниверсальный англо-русский словарь > V-groove MOS gate (VMOS gate)
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8 VMOS gate (V-groove MOS gate)
Макаров: логический элемент на МОП-транзисторах с V-образными канавкамиУниверсальный англо-русский словарь > VMOS gate (V-groove MOS gate)
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9 V-groove MOS gate
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10 V-groove MOS gate
The New English-Russian Dictionary of Radio-electronics > V-groove MOS gate
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11 single-device MOS gate
English-Russian dictionary of microelectronics > single-device MOS gate
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12 v-groove mos gate
English-Russian dictionary of microelectronics > v-groove mos gate
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13 v-groove mos gate
English-Russian dictionary of electronics > v-groove mos gate
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14 gate
1) логический элемент, ЛЭ; (логическая) схема; проф. вентиль; шлюз || управлять (напр. работой устройства) с помощью логических элементов или логических схем; использовать логические элементы или логические схемы2) селекторный импульс, стробирующий импульс, строб-импульс || осуществлять селекцию во времени; стробировать4) затвор (напр. полевого транзистора)5) пп управляющий электрод (напр. тиристора)•to gate in — вводить ( сигнал)
to gate out — выделять ( сигнал)
- gate A20- alternative denial gate
- amplitude gate
- AND gate
- AND-INVERT gate
- AND-NOT gate
- anode gate
- back gate
- biconditional gate
- binary-logic gate
- bottom gate
- burst gate
- call gate
- capacitor-resistor-diode gate
- cathode gate
- clocked gate
- CML gate
- coincidence gate
- complement gate
- conjunction gate
- control gate
- CRD gate
- current-field-access swap gate
- current-mode gate
- current-mode logic gate
- difference gate
- diode gate
- diode-transistor logic gate
- discrete gate
- disjunction gate
- dispersion gate
- diversity gate
- DTL gate
- dual gate
- EITHER-OR gate
- emitter-coupled gate
- enabling gate
- equality gate
- equivalence gate
- equivalent gate
- except gate
- exclusive NOR gate
- exclusive OR gate
- fault-free gate
- faulty gate
- ferroelectric light gate
- film gate
- floating gate
- flux gate
- GaAs logic gate
- guard gate
- IC logic gate
- identity gate
- if-A-then-NOT-B gate
- I2L gate
- in gate
- inclusive NOR gate
- inclusive OR gate
- indicator gate
- information gate
- inhibition gate
- input gate
- insulated gate
- integrated injection logic gate
- interrupt gate
- inverting logic gate
- joint denial gate
- Josephson logic gate
- Josephson-junction logic gate
- junction gate
- latching Boolean gate
- logic gate
- logical gate
- magnetic gate
- majority gate
- match gate
- meshed gate
- metal gate
- metal-oxide-semiconductor gate
- mix gate
- molibdenum gate
- MOS gate
- multiemitter gate
- multiple-level gate
- multiple-level logic gate
- NAND gate
- n-channel silicon gate
- negation gate
- negative AND -gate
- negative OR gate
- negative unate gate
- NEITHER-NOR gate
- N-input gate
- nitride gate
- NMOS silicon gate
- noise gate
- nonconjunction gate
- nondisjunction gate
- nonequality gate
- nonequivalence gate
- nonunate gate
- NOR gate
- NOT gate
- NOT-AND gate
- one-nanosecond gate
- opaque gate
- optical gate
- OR gate
- OTHER-OR gate
- out gate
- outer gate
- overlapping gates
- p-channel silicon gate
- PMOS silicon gate
- p-n junction gate
- polysilicon gate
- positive unate gate
- primitive logic gate
- pulse gate
- range gate
- readout gate
- refractory gate
- replicate gate
- resistive insulated gate
- resistively connected gates
- resistor-transistor logic gate
- RTL gate
- sampling gate
- scan gate
- sealed gate
- searching gate
- self-aligned gate
- self-registered gate
- Shottky gate
- Shottky-barrier gate
- silicon gate
- stacked gate
- stated gate
- stateful gate
- stateless gate
- storage gate
- substrate gate
- swap gate
- synchronous gate
- task gate
- threshold gate
- thyratron gate
- time gate
- T2L gate
- top gate
- transfer gate
- transistor-transistor logic gate
- trap gate
- TTL gate
- tunneling cryotron gate
- variable-threshold gate
- V-groove MOS gate
- video gate
- VMOS gate
- write gate
- XNOR gate
- XOR gate
- zero-match gate -
15 gate
1) логический элемент, ЛЭ; (логическая) схема; проф. вентиль; шлюз || управлять (напр. работой устройства) с помощью логических элементов или логических схем; использовать логические элементы или логические схемы2) селекторный импульс, стробирующий импульс, строб-импульс || осуществлять селекцию во времени; стробировать4) затвор (напр. полевого транзистора)5) пп. управляющий электрод (напр. тиристора)•to gate in — вводить ( сигнал)
- amplitude gateto gate out — выделять ( сигнал), to gate through пропускать ( сигнал)
- AND gate
- AND-INVERT gate
- AND-NOT gate
- anode gate
- back gate
- biconditional gate
- binary-logic gate
- bottom gate
- burst gate
- call gate
- capacitor-resistor-diode gate
- cathode gate
- clocked gate
- CML gate
- coincidence gate
- complement gate
- conjunction gate
- control gate
- CRD gate
- current-field-access swap gate
- current-mode gate
- current-mode logic gate
- difference gate
- diode gate
- diode-transistor logic gate
- discrete gate
- disjunction gate
- dispersion gate
- diversity gate
- DTL gate
- dual gate
- EITHER-OR gate
- emitter-coupled gate
- enabling gate
- equality gate
- equivalence gate
- equivalent gate
- except gate
- exclusive NOR gate
- exclusive OR gate
- fault-free gate
- faulty gate
- ferroelectric light gate
- film gate
- floating gate
- flux gate
- GaAs logic gate
- gate A20
- guard gate
- I2L gate
- IC logic gate
- identity gate
- if-A-then-NOT-B gate
- in gate
- inclusive NOR gate
- inclusive OR gate
- indicator gate
- information gate
- inhibition gate
- input gate
- insulated gate
- integrated injection logic gate
- interrupt gate
- inverting logic gate
- joint denial gate
- Josephson logic gate
- Josephson-junction logic gate
- junction gate
- latching Boolean gate
- logic gate
- logical gate
- magnetic gate
- majority gate
- match gate
- meshed gate
- metal gate
- metal-oxide-semiconductor gate
- mix gate
- molibdenum gate
- MOS gate
- multiemitter gate
- multiple-level gate
- multiple-level logic gate
- NAND gate
- n-channel silicon gate
- negation gate
- negative AND-gate
- negative OR gate
- negative unate gate
- NEITHER-NOR gate
- N-input gate
- nitride gate
- NMOS silicon gate
- noise gate
- nonconjunction gate
- nondisjunction gate
- nonequality gate
- nonequivalence gate
- nonunate gate
- NOR gate
- NOT gate
- NOT-AND gate
- one-nanosecond gate
- opaque gate
- optical gate
- OR gate
- OTHER-OR gate
- out gate
- outer gate
- overlapping gates
- p-channel silicon gate
- PMOS silicon gate
- p-n junction gate
- polysilicon gate
- positive unate gate
- primitive logic gate
- pulse gate
- range gate
- readout gate
- refractory gate
- replicate gate
- resistive insulated gate
- resistively connected gates
- resistor-transistor logic gate
- RTL gate
- sampling gate
- scan gate
- sealed gate
- searching gate
- self-aligned gate
- self-registered gate
- Shottky gate
- Shottky-barrier gate
- silicon gate
- stacked gate
- stated gate
- stateful gate
- stateless gate
- storage gate
- substrate gate
- swap gate
- synchronous gate
- T2L gate
- task gate
- threshold gate
- thyratron gate
- time gate
- top gate
- transfer gate
- transistor-transistor logic gate
- trap gate
- TTL gate
- tunneling cryotron gate
- variable-threshold gate
- V-groove MOS gate
- video gate
- VMOS gate
- write gate
- XNOR gate
- XOR gate
- zero-match gateThe New English-Russian Dictionary of Radio-electronics > gate
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16 MOS
I сокр. от mean opinion score II сокр. от metal-oxide-semiconductorструктура (типа) металл - оксид - полупроводник, МОП-структура-
adjustable-threshold MOS
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aluminum-gate MOS
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back-gate MOS
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beam-addressed MOS
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bipolar MOS
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bulk complementary MOS
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buried channel MOS
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buried-oxide MOS
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clocked complementary MOS
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complementary MOS
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depletion MOS
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dielectric insulated MOS
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dielectric isolated MOS
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diffusion self-aligned MOS
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double polysilicon MOS
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double poly MOS
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double-diffused MOS
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double-implanted MOS
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dynamic complementary MOS
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enhancement MOS
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enhancement/depletion MOS
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floating-gate avalanche injection MOS
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floating-gate MOS
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high-density MOS
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high-performance complementery MOS
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high-threshold MOS
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high-voltage MOS
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insulated gate MOS
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ion-implanted MOS
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isolated gate MOS
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junction gate MOS
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lateral planar MOS
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local oxidation MOS
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long MOS
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low-threshold MOS
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metal-gate MOS
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micrometer MOS
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micron MOS
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n-channel MOS
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p-channel MOS
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polysilicon self-aligned MOS
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poly self-aligned MOS
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power MOS
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quadruple self-aligned MOS
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refractory MOS
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resistive-gate MOS
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scaled-down MOS
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scaled MOS
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Schottky-barrier MOS
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self-aligned MOS
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silicon-gate technology MOS
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silicon-gate MOS
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silicon-on-sapphire complementary MOS
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stacked transistors complementary MOS
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submicrometer MOS
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submicron MOS
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surface gate MOS
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three-dimensional MOS
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transverse MOS
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triple-polysilicon MOS
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triple-poly MOS
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V-groove MOS
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V MOS -
17 MOS
1) [mean opinion score] оценка качества передачи речи2) [metal-oxide semiconductor] структура металл-оксид-полупроводник, МОП-структура3) [metal-oxide-silicon] структура металл-оксид-кремний•- bi MOS- bipolar MOS
- C-MOS
- complementary MOS
- D-MOS
- double-diffusion MOS
- dual-injection MOS
- FA MOS
- floating-gate avalanche injection MOS
- high-density MOS
- high-performance MOS
- high-speed MOS
- n MOS
- n-channel MOS
- p MOS
- p-channel MOS
- V-MOS
- V-groove MOS -
18 MOS
1) сокр. от mean opinion score оценка качества передачи речи2) сокр. от metal-oxide semiconductor структура металл-оксид-полупроводник, МОП-структура- bi MOS- bipolar MOS
- C MOS
- complementary MOS
- D MOS
- double-diffusion MOS
- dual-injection MOS
- FA MOS
- floating-gate avalanche-injection MOS
- high-density MOS
- high-performance MOS
- high-speed MOS
- n MOS
- n-channel MOS
- p MOS
- p-channel MOS
- V-groove MOS- V-MOS3) сокр. от metal-oxide-silicon структура металл-оксид-кремнийThe New English-Russian Dictionary of Radio-electronics > MOS
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19 gate-injection mos
MOS design — МОП-структура; МОП-прибор
English-Russian big polytechnic dictionary > gate-injection mos
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20 MOS array
processor array — матрица процессоров; процессорная матрица
См. также в других словарях:
single-device MOS gate — loginis elementas su vienu MOP tranzistoriumi statusas T sritis automatika atitikmenys: angl. single device MOS gate vok. Eintransistor MOS Gatter, n rus. логический элемент на одном МОП транзисторе, m pranc. porte à un transistor MOS, f … Automatikos terminų žodynas
gate-injection MOS — MOP darinys su injekuojamąja užtūra statusas T sritis radioelektronika atitikmenys: angl. gate injection MOS; gate injection MOS structure vok. Injektionsgate MOS Struktur, f rus. МОП структура с инжекционным затвором, f pranc. structure MOS à… … Radioelektronikos terminų žodynas
gate-injection MOS structure — MOP darinys su injekuojamąja užtūra statusas T sritis radioelektronika atitikmenys: angl. gate injection MOS; gate injection MOS structure vok. Injektionsgate MOS Struktur, f rus. МОП структура с инжекционным затвором, f pranc. structure MOS à… … Radioelektronikos terminų žodynas
MOS Controlled Thyristor — (or MCT) is voltage controlled fully controllable thyristor. The MCT is similar in operation with GTO thyristor, but it has voltage controlled insulated gate. It has two MOSFETs in its equivalent circuit. One is responsible for turn on and the… … Wikipedia
MOS Technology — MOS Technology, Inc., también conocida como Commodore Semiconductor Group, (al ser adquirida por CBM), fue un fabricante de calculadoras y microprocesadores, siendo famosa por su microprocesador MOS Technology 6502. Pese a la similitud, no tiene… … Wikipedia Español
MOS Technology — MOS Technology, Inc., также известная как CSG (Commodore Semiconductor Group) американская компания, разработчик и производитель микросхем. Располагалась в Норристоне, штат Пенсильвания. Наиболее известна как разработчик микропроцессора… … Википедия
MOS composite static induction thyristor/CSMT — MOS composite static induction thyristor (CSMT or MCS) is a combination of a MOS transistor connected in cascode relation to the SI thyristor. The SI thyristor (SITh) unit has a gate to which a source of MOS transistor is connected through a… … Wikipedia
MOS-FET — Der Metall Oxid Halbleiter Feldeffekttransistor (englisch: metal oxide semiconductor field effect transistor, MOSFET auch MOS FET, selten MOST) ist eine Variante der Feldeffekttransistoren mit isoliertem Gate (IGFET), genauer der Metall Isolator… … Deutsch Wikipedia
MOS-Fet — Der Metall Oxid Halbleiter Feldeffekttransistor (englisch: metal oxide semiconductor field effect transistor, MOSFET auch MOS FET, selten MOST) ist eine Variante der Feldeffekttransistoren mit isoliertem Gate (IGFET), genauer der Metall Isolator… … Deutsch Wikipedia
MOS-Struktur mit isoliertem Gate — MOP darinys su izoliuotąja užtūra statusas T sritis radioelektronika atitikmenys: angl. isolated gate MOS; isolated gate MOS structure vok. MOS Struktur mit isoliertem Gate, f rus. МОП структура с изолированным затвором, f pranc. structure MOS à… … Radioelektronikos terminų žodynas
MOS-Struktur mit schwebendem Gate — MOP darinys su plūdriąja užtūra statusas T sritis radioelektronika atitikmenys: angl. floating gate MOS; floating gate MOS structure vok. MOS Struktur mit schwebendem Gate, f rus. МОП структура с плавающим затвором, f pranc. structure MOS à… … Radioelektronikos terminų žodynas
